SYNTHESIS OF CHROMIUM SILICIDE WITH LASER-PULSES

被引：3

作者：

DANNA, E

DRIGO, AV

LEGGIERI, G

LUCHES, A

MAJNI, G

MENGUCCI, P

机构：

[1] UNIV LECCE,DIPARTIMENTO SCI MAT,I-73100 LECCE,ITALY

[2] UNIV ANCONA,DIPARTIMENTO SCI MAT TERRA,I-60100 ANCONA,ITALY

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1990年 / 50卷 / 04期

关键词：

68.55; 79.20D; 82.50;

D O I：

10.1007/BF00323599

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin chromium films, 60 nm thick, were deposited onto single-crystal silicon wafers. The samples were irradiated with 30 ns single pulses from a Nd: glass laser at fluences ranging from 0.4 to 2.25 J/cm2. Rutherford backscattering spectrometry, transmission electron microscopy and electron diffraction measurements evidence the formation of CrSi2 layers at the Cr/Si interface. The silicide thickness depends on the laser fluence. © 1990 Springer-Verlag.

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页码：411 / 415

页数：5

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