LUMINESCENCE SPECTRA OF AN N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR AT BREAKDOWN

被引：17

作者：

DAS, NC ^{[1
]}

ARORA, BM ^{[1
]}

机构：

[1] TATA INST FUNDAMENTAL RES,SOLID STATE ELECTR GRP,BOMBAY 400005,INDIA

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 12期

关键词：

D O I：

10.1063/1.102547

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photon emission occurs from the drain gate boundary of a metal-oxide-semiconductor field-effect transistor when drain bias exceeds the drain-to-source breakdown value. Spectral measurement of luminescence has been carried out over a wide range 0.7-3.1 eV in order to understand the origin of the emission. Three different types of detectors are used to measure the luminescence spectrum. A continuous broad spectrum is observed with a peak near 1.0 eV. The emission intensity decreases almost exponentially in the higher energy range.

引用

页码：1152 / 1153

页数：2

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