PHOTON GENERATION IN FORWARD-BIASED SILICON P-N-JUNCTIONS

[1] ALTERNATIVE MECHANISM FOR SUBSTRATE MINORITY-CARRIER INJECTION IN MOS DEVICES OPERATING IN LOW-LEVEL AVALANCHE [J]. ELECTRONICS LETTERS, 1981, 17 (08) : 281 - 282

[2] PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1956, 102 (02): : 369 - 376

[3] HOLDING TIME DEGRADATION IN DYNAMIC MOS RAM BY INJECTION-INDUCED ELECTRON CURRENTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (12) : 1515 - 1519

[4] GEROSA G, 41ST ANN DEV RES C V

[5] INFRARED RADIATION FROM BREAKDOWN PLASMAS IN SI, GASB, AND GE - EVIDENCE FOR DIRECT FREE HOLE RADIATION [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 25 (01): : 301 - 310

[6] HSU FC, 1983, IEEE T ELECTRON DEV, V30, P571

[7] MATSUNAGA J, 1980, DEC IEDM WASH

[8] Pankove J. I, 1975, OPTICAL PROCESSES SE

[9] INFRARED ABSORPTION IN N-TYPE SILICON [J]. PHYSICAL REVIEW, 1957, 108 (02): : 268 - 271

[10] SZE SM, 1981, PHYSICS SEMICONDUCTO

[1] ALTERNATIVE MECHANISM FOR SUBSTRATE MINORITY-CARRIER INJECTION IN MOS DEVICES OPERATING IN LOW-LEVEL AVALANCHE [J]. ELECTRONICS LETTERS, 1981, 17 (08) : 281 - 282

[2] PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1956, 102 (02): : 369 - 376

[3] HOLDING TIME DEGRADATION IN DYNAMIC MOS RAM BY INJECTION-INDUCED ELECTRON CURRENTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (12) : 1515 - 1519

[4] GEROSA G, 41ST ANN DEV RES C V

[5] INFRARED RADIATION FROM BREAKDOWN PLASMAS IN SI, GASB, AND GE - EVIDENCE FOR DIRECT FREE HOLE RADIATION [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 25 (01): : 301 - 310

[6] HSU FC, 1983, IEEE T ELECTRON DEV, V30, P571

[7] MATSUNAGA J, 1980, DEC IEDM WASH

[8] Pankove J. I, 1975, OPTICAL PROCESSES SE

[9] INFRARED ABSORPTION IN N-TYPE SILICON [J]. PHYSICAL REVIEW, 1957, 108 (02): : 268 - 271

[10] SZE SM, 1981, PHYSICS SEMICONDUCTO