MECHANISM OF LASER-INDUCED METAL-SEMICONDUCTOR ELECTRICAL CONNECTIONS IN MOS STRUCTURES

被引：11

作者：

PLATAKIS, NS ^{[1
]}

机构：

[1] IBM CORP,RES CTR,SAN JOSE,CA 95193

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 05期

关键词：

D O I：

10.1063/1.322858

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2120 / 2128

页数：9

共 11 条

[1]

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[3]

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[4] CONNECTIONS AND DISCONNECTIONS ON INTEGRATED-CIRCUITS USING NANOSECOND LASER PULSES [J].

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SCHUSTER, SE ;

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[5] SILICON DIODES MADE BY LASER IRRADIATION [J].

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[6]

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[7]

GAGLIANO FP, 1972, LASERS INDUSTRY, P190

[8] PROPERTIES OF SI DIODES PREPARED BY ALLOYING AL INTO N-TYPE SI WITH HEAT PULSES FROM A ND-YAG LASER [J].

HARPER, FE ;

COHEN, MI .

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[9] EXPERIMENTAL STUDY OF LASER FORMED CONNECTIONS FOR LSI WAFER PERSONALIZATION [J].

KUHN, L ;

SCHUSTER, SE ;

ZORY, PS ;

LYNCH, GW ;

PARRISH, JT .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, 10 (04) :219-228

[10] STIMULATED OPTICAL RADIATION IN RUBY [J].

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