CHEMICALLY ENHANCED THERMAL-OXIDATION OF SILICON

被引：9

作者：

SCHMIDT, PF ^{[1
]}

JACCODINE, RJ ^{[1
]}

WOLOWODIUK, CH ^{[1
]}

KOOK, T ^{[1
]}

机构：

[1] LEHIGH UNIV,SHERMAN FAIRCHILD CTR SOLID STATE STUDIES,BETHLEHEM,PA 18015

来源：

MATERIALS LETTERS | 1985年 / 3卷 / 5-6期

关键词：

D O I：

10.1016/0167-577X(85)90063-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：235 / 238

页数：4

共 10 条

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CHUANG, TJ .

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[2] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

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[3] KINETICS OF THERMAL-OXIDATION OF SILICON IN O2/H2O AND O2/CL2 MIXTURES [J].

DEAL, BE ;

HESS, DW ;

PLUMMER, JD ;

HO, CP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (02) :339-346

[4]

EITEL W, 1954, PHYSICAL CHEMISTRY S, P81

[5]

ERICKSSON G, 1971, ACTA CHEM SCAND, V25, P2651

[6] KINETICS OF THERMAL-OXIDATION OF SILICON IN O2-HCL MIXTURES [J].

HESS, DW ;

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (05) :735-739

[7] NEUTRALIZATION OF NA+ IONS IN HCL-GROWN SIO2 [J].

KRIEGLER, RJ .

APPLIED PHYSICS LETTERS, 1972, 20 (11) :449-&

[8] EFFECT OF HCL AND CL2 ON THERMAL OXIDATION OF SILICON [J].

KRIEGLER, RJ ;

CHENG, YC ;

COLTON, DR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (03) :388-&

[9]

KRIEGLER RJ, 1973, DENKI KAGAKU, V41, P466

[10]

MONKOWSKI J, 1979, SOLID STATE TECH JUL, P58

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