EXPERIMENTAL CHARACTERIZATION OF GOLD-DOPED INFRARED-SENSING MOSFETS

被引：8

作者：

PARKER, WC ^{[1
]}

FORBES, L ^{[1
]}

机构：

[1] UNIV ARKANSAS, DEPT ELECT ENGN, FAYETTEVILLE, AR 72701 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年 / 22卷 / 10期

关键词：

D O I：

10.1109/T-ED.1975.18242

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：916 / 924

页数：9

共 23 条

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[2] ELECTRICAL PROPERTIES OF GOLD AT SILICON-DIELECTRIC INTERFACE [J].

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[3] PROPERTIES OF GOLD IN SILICON [J].

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SOLID-STATE ELECTRONICS, 1966, 9 (02) :143-&

[4] PROPERTIES OF GOLD DOPED MOS STRUCTURES [J].

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SNOW, EH .

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[5]

CARR WN, 1972, MOS LSI DESIGN APPLI, P1

[6] PROPERTIES OF GOLD-DOPED SILICON [J].

COLLINS, CB ;

CARLSON, RO ;

GALLAGHER, CJ .

PHYSICAL REVIEW, 1957, 105 (04) :1168-1173

[7] GOLD DIFFUSIVITIES IN SIO2 AND SI USING MOS STRUCTURE - (800 TO 1200 DEGREES C - IMPURITY EFFECTS - BULK VS SURFACE DIFFUSION - E/T) [J].

COLLINS, DR ;

SCHRODER, DK ;

SAH, CT .

APPLIED PHYSICS LETTERS, 1966, 8 (12) :323-&

[8]

CRUM F, 1974, ELECTRO OPT SYST NOV, P82

[9] DESIGN FOR SILICON INFRARED SENSING MOSFET [J].

FORBES, L ;

YEARGAN, JR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (08) :459-462

[10]

FORBES L, 1970, THESIS U ILLINOIS

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