COPPER IN SILICON

被引：48

作者：

KELLER, R ^{[1
]}

DEICHER, M ^{[1
]}

PFEIFFER, W ^{[1
]}

SKUDLIK, H ^{[1
]}

STEINER, D ^{[1
]}

WICHERT, T ^{[1
]}

机构：

[1] UNIV SAARLAND,W-6600 SAARBRUCKEN,GERMANY

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 65卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.65.2023

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The presence of Cu atoms in p-type Si is detected via their characteristic electric-field gradients measured at the radioactive acceptor In111/111Cd by the perturbed angular correlation technique. Cu forms pairs with acceptor atoms, thereby electrically passivating them, and is present as a contamination in Si wafers. Using the experimentally known Cu diffusion data and taking into account the effect of ion pairing, a new activation energy of 0.15 eV is deduced, which is in accordance with the dissociation energy of 0.70 eV measured for Coulombic-bound-acceptorεCu pairs. © 1990 The American Physical Society.

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页码：2023 / 2026

页数：4

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