PAIRING OF ACCEPTORS WITH INTERSTITIAL DONORS IN SILICON AND GERMANIUM

被引：11

作者：

DEICHER, M

KELLER, R

PFEIFFER, W

SKUDLIK, H

STEINER, D

RECKNAGEL, E

WICHERT, T

机构：

[1] Univ Konstanz, Germany

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 4卷 / 1-4期

关键词：

Mathematical Techniques--Correlation Methods - Semiconducting Germanium--Defects - Semiconductor Materials--Charge Carriers;

D O I：

10.1016/0921-5107(89)90210-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The interaction of acceptor atoms with the interstitial impurity atoms hydrogen and lithium in the semiconductors silicon and germanium has been studied with help of the perturbed γγ angular correlation technique at the radioactive acceptor 111In. The formed acceptor-donor pairs, as characterized by their electric field gradients, show some striking differences in silicon and germanium. In particular, besides the thermal stability of the pairs, the number of formed In-Li and In-H complexes is different in silicon and germanium. The behaviour of the formed complexes as a function of the carrier concentration is discussed.

引用

页码：25 / 29

页数：5

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