EXPLANATION OF THE ORIGIN OF ELECTRONS IN THE UNINTENTIONALLY DOPED INAS/ALSB SYSTEM

被引：10

作者：

SHEN, J ^{[1
]}

GORONKIN, H ^{[1
]}

DOW, JD ^{[1
]}

REN, SY ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,DEPT PHYS & ASTRON,TEMPE,AZ 85287

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 04期

关键词：

D O I：

10.1116/1.587885

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Theoretical studies are summarized which show that (i) anion-site antisite defects Al-Sb in AlSb barriers and (ii) interfacial native defects such as As-Al at AlAs-like interfaces are the origin of electrons in nominally undoped InAs quantum wells of AlSb/InAs heterojunctions. Tamm interface states, while present at the InSb-like interfaces, lie at too low energy to account for the observed carrier densities. (C) 1995 American Vacuum Society.

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页码：1736 / 1739

页数：4

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