BAND BENDING VARIATION OF THE SI(111) SURFACE DURING ITS THERMAL-OXIDATION

被引：10

作者：

DERRIEN, J ^{[1
]}

RINGEISEN, F ^{[1
]}

机构：

[1] UNIV HAUTE ALSACE,PHYS & SPECTROSCOPIE ELECTR LAB,ISEA,F-68093 MULHOUSE,FRANCE

来源：

SOLID STATE COMMUNICATIONS | 1984年 / 50卷 / 07期

关键词：

D O I：

10.1016/0038-1098(84)90144-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：627 / 628

页数：2

共 8 条

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[J]. PHYSICAL REVIEW B, 1983, 28 (12): : 7014 - 7018
[6] MULTIPLE-BONDING CONFIGURATIONS FOR OXYGEN ON SILICON SURFACES
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[J]. PHYSICAL REVIEW B, 1983, 28 (06) : 3651 - 3653
[7] PRECISE DETERMINATION OF THE VALENCE-BAND EDGE IN X-RAY PHOTOEMISSION SPECTRA - APPLICATION TO MEASUREMENT OF SEMICONDUCTOR INTERFACE POTENTIALS
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[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (24) : 1620 - 1623
[8] SCHOTTKY-BARRIER FORMATION AT PD, PT, AND NI/SI(111) INTERFACES
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HO, PS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 566 - 569

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