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LATERAL EXTENT OF OXIDATION-ENHANCED DIFFUSION OF PHOSPHORUS IN (100) SILICON

被引：22
作者：
TANIGUCHI, K
ANTONIADIS, DA
机构：
来源：
APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 10期
关键词：
D O I：
10.1063/1.95829
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：944 / 946
页数：3
相关论文
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