LIQUID-PHASE ELECTROEPITAXY OF III-V SEMICONDUCTORS

被引：12

作者：

GOLUBEV, LV

EGOROV, AV

NOVIKOV, SV

SHMARTSEV, YV

机构：

[1] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA

[2] TECH CTR SPLAV,MOSCOW 121059,RUSSIA

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 146卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)00487-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The basic principles, main results and perspectives of liquid phase electroepitaxy (LPEE) as a growth method for binary and multicomponent III-V semiconductor layers and bulk crystals are analysed.

引用

页码：277 / 282

页数：6

共 106 条

[1] CURRENT CONTROLLED LIQUID-PHASE EPITAXIAL (CCLPE) GROWTH OF INGAAS ON (100) INP [J].

ABULFADL, A ;

STEFANAKOS, EK ;

COLLIS, WJ .

JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (03) :559-573

[2] SELECTIVE ETCH-BACK AND GROWTH OF INGAAS ON (100) FE-INP BY ELECTROEPITAXY [J].

ABULFADL, A ;

COLLIS, W ;

MAANAKI, S ;

MCCARTY, T ;

IYER, S .

JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (01) :111-116

[3] CURRENT CONTROLLED LPE GROWTH OF INXGA1-XAS ON GAAS [J].

ABULFADL, A ;

STEFANAKOS, EK ;

COLLIS, WJ .

JOURNAL OF CRYSTAL GROWTH, 1981, 51 (02) :279-282

[4] CHARACTERIZATION OF GAAS-LAYERS GROWN ON POLYCRYSTALLINE GAAS BY LPE AND CURRENT CONTROLLED LPE [J].

ABULFADL, A ;

STEFANAKOS, E ;

NANCE, W ;

COLLIS, W ;

MCPHERSON, J .

JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (03) :621-638

[5] PELTIER COOLING AT A IN-INP INTERFACE [J].

ABULFADL, A ;

STEFANAKOS, EK .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (10) :4627-4628

[6] CURRENT CONTROLLED LPE GROWTH OF INP [J].

ABULFADL, A ;

STEFANAKOS, EK .

JOURNAL OF CRYSTAL GROWTH, 1977, 39 (02) :341-345

[7]

Arutyunyan V. M., 1986, Soviet Physics - Technical Physics, V31, P1287

[8]

Barchuk A. N., 1982, Soviet Physics - Technical Physics, V27, P1153

[9]

Barchuk A. N., 1979, Soviet Physics - Technical Physics, V24, P368

[10] LIQUID-PHASE ELECTROEPITAXY [J].

BICELLI, LP .

SURFACE & COATINGS TECHNOLOGY, 1986, 29 (01) :1-12

← 1 2 3 4 5 6 7 8 9 10 →