CURRENT CONTROLLED LIQUID-PHASE EPITAXIAL (CCLPE) GROWTH OF INGAAS ON (100) INP

被引：13

作者：

ABULFADL, A

STEFANAKOS, EK

COLLIS, WJ

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1982年 / 11卷 / 03期

关键词：

D O I：

10.1007/BF02654689

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：559 / 573

页数：15

共 23 条

[1] CURRENT CONTROLLED LPE GROWTH OF INXGA1-XAS ON GAAS [J].

ABULFADL, A ;

STEFANAKOS, EK ;

COLLIS, WJ .

JOURNAL OF CRYSTAL GROWTH, 1981, 51 (02) :279-282

[2] CHARACTERIZATION OF GAAS-LAYERS GROWN ON POLYCRYSTALLINE GAAS BY LPE AND CURRENT CONTROLLED LPE [J].

ABULFADL, A ;

STEFANAKOS, E ;

NANCE, W ;

COLLIS, W ;

MCPHERSON, J .

JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (03) :621-638

[3] CURRENT CONTROLLED LPE GROWTH OF INP [J].

ABULFADL, A ;

STEFANAKOS, EK .

JOURNAL OF CRYSTAL GROWTH, 1977, 39 (02) :341-345

[4] PREVENTION OF INP SURFACE DECOMPOSITION IN LIQUID-PHASE EPITAXIAL-GROWTH [J].

ANTYPAS, GA .

APPLIED PHYSICS LETTERS, 1980, 37 (01) :64-65

[5]

ANTYPAS GA, 1979, C SERIES I PHYSICS, V45, P89

[6] 1.67-MU-M GA0.47IN0.53AS-INP DH LASERS DOUBLE CLADDED WITH INP BY LPE TECHNIQUE [J].

ARAI, S ;

SUEMATSU, Y ;

ITAYA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (03) :709-710

[7] PROPERTIES OF MOLECULAR-BEAM EPITAXIAL INXGA1-XAS(X-ALMOST-EQUAL-TO-0.53) LAYERS GROWN ON INP SUBSTRATES [J].

ASAHI, H ;

OKAMOTO, H ;

IKEDA, M ;

KAWAMURA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (03) :565-573

[8] INGAAS DETECTOR FOR 1.0-1.7-MUM WAVELENGTH RANGE [J].

BACHMANN, KJ ;

SHAY, JL .

APPLIED PHYSICS LETTERS, 1978, 32 (07) :446-448

[9] DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS MESFETS WITH SUB-MICRON GATES [J].

BARNARD, J ;

OHNO, H ;

WOOD, CEC ;

EASTMAN, LF .

ELECTRON DEVICE LETTERS, 1980, 1 (09) :174-176

[10] PELTIER-INDUCED LPE AND COMPOSITION STABILIZATION OF GAALAS [J].

DANIELE, JJ .

APPLIED PHYSICS LETTERS, 1975, 27 (07) :373-375

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