CURRENT CONTROLLED LPE GROWTH OF INXGA1-XAS ON GAAS

被引：9

作者：

ABULFADL, A

STEFANAKOS, EK

COLLIS, WJ

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 51卷 / 02期

关键词：

D O I：

10.1016/0022-0248(81)90311-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：279 / 282

页数：4

共 17 条

[1] CHARACTERIZATION OF GAAS-LAYERS GROWN ON POLYCRYSTALLINE GAAS BY LPE AND CURRENT CONTROLLED LPE [J].

ABULFADL, A ;

STEFANAKOS, E ;

NANCE, W ;

COLLIS, W ;

MCPHERSON, J .

JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (03) :621-638

[2] CURRENT CONTROLLED LPE GROWTH OF INP [J].

ABULFADL, A ;

STEFANAKOS, EK .

JOURNAL OF CRYSTAL GROWTH, 1977, 39 (02) :341-345

[3]

ANTYPAS GA, 1970, J ELECTROCHEM SOC, V117, P11

[4] PELTIER-INDUCED LPE AND COMPOSITION STABILIZATION OF GAALAS [J].

DANIELE, JJ .

APPLIED PHYSICS LETTERS, 1975, 27 (07) :373-375

[5]

EASTMAN L, 1979, AFOSR762929 FIN REP

[6] ATOM MOTION IN LIQUID ALLOYS IN PRESENCE OF AN ELECTRIC FIELD [J].

EPSTEIN, SG ;

PASKIN, A .

PHYSICS LETTERS A, 1967, A 24 (06) :309-+

[7] METALLURGICAL AND ELECTROLUMINESCENCE CHARACTERISTICS OF VAPOR-PHASE AND LIQUID-PHASE EPITAXIAL JUNCTION STRUCTURES OF INXGA1-XAS [J].

ETTENBERG, M ;

NUESE, CJ ;

APPERT, JR ;

GANNON, JJ ;

ENSTROM, RE .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (01) :37-66

[8]

JASTRZEBSKI J, 1978, J APPL PHYS, V49, P112

[9] THICKNESS UNIFORMITY OF GAAS LAYERS GROWN BY ELECTROEPITAXY [J].

JASTRZEBSKI, L ;

IMAMURA, Y ;

GATOS, HC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (07) :1140-1146

[10]

KUMAGAWA M, 1973, J ELECTROCHEM SOC, V120

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