RECENT DEVELOPMENTS IN HGCDTE AND HGZNTE GROWTH FROM TE SOLUTIONS

被引：13

作者：

CASTRO, CA

TREGILGAS, JH

机构：

[1] Texas Instruments Inc, Dallas, TX,, USA, Texas Instruments Inc, Dallas, TX, USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 86卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90711-S

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：138 / 145

页数：8

共 19 条

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[9] CRYSTAL-GROWTH OF LARGE-AREA SINGLE-CRYSTAL CDTE AND CDZNTE BY THE COMPUTER-CONTROLLED VERTICAL MODIFIED-BRIDGMAN PROCESS [J].

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[10] PROPERTIES OF HG1-XZNX TE GROWN BY LIQUID-PHASE EPITAXY [J].

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04) :2024-2027

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