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INTERFACE CHARGE CONTROL OF DIRECTLY BONDED SILICON STRUCTURES
被引:102
作者
:
BENGTSSON, S
论文数:
0
引用数:
0
h-index:
0
BENGTSSON, S
ENGSTROM, O
论文数:
0
引用数:
0
h-index:
0
ENGSTROM, O
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1989年
/ 66卷
/ 03期
关键词
:
D O I
:
10.1063/1.343469
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1231 / 1239
页数:9
相关论文
共 19 条
[1]
STABILITY OF INTERFACIAL OXIDE LAYERS DURING SILICON-WAFER BONDING
AHN, KY
论文数:
0
引用数:
0
h-index:
0
机构:
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
AHN, KY
STENGL, R
论文数:
0
引用数:
0
h-index:
0
机构:
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
STENGL, R
TAN, TY
论文数:
0
引用数:
0
h-index:
0
机构:
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
TAN, TY
GOSELE, U
论文数:
0
引用数:
0
h-index:
0
机构:
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
GOSELE, U
SMITH, P
论文数:
0
引用数:
0
h-index:
0
机构:
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
SMITH, P
[J].
JOURNAL OF APPLIED PHYSICS,
1989,
65
(02)
: 561
-
563
[2]
[Anonymous], 1986, WEDDING HOME AUT, P122
[3]
A FIELD-ASSISTED BONDING PROCESS FOR SILICON DIELECTRIC ISOLATION
FRYE, RC
论文数:
0
引用数:
0
h-index:
0
FRYE, RC
GRIFFITH, JE
论文数:
0
引用数:
0
h-index:
0
GRIFFITH, JE
WONG, YH
论文数:
0
引用数:
0
h-index:
0
WONG, YH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1986,
133
(08)
: 1673
-
1677
[4]
FURUKAWA K, 1986, 18TH INT C SOL STAT, P533
[5]
EPITAXIAL FILM TRANSFER TECHNIQUE FOR PRODUCING SINGLE-CRYSTAL SI FILM ON AN INSULATING SUBSTRATE
KIMURA, M
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,DIV RES & DEV PLANNING & TECH SERV,MIYAMAE KU,KAWASAKI,JAPAN
NEC CORP,DIV RES & DEV PLANNING & TECH SERV,MIYAMAE KU,KAWASAKI,JAPAN
KIMURA, M
EGAMI, K
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,DIV RES & DEV PLANNING & TECH SERV,MIYAMAE KU,KAWASAKI,JAPAN
NEC CORP,DIV RES & DEV PLANNING & TECH SERV,MIYAMAE KU,KAWASAKI,JAPAN
EGAMI, K
KANAMORI, M
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,DIV RES & DEV PLANNING & TECH SERV,MIYAMAE KU,KAWASAKI,JAPAN
NEC CORP,DIV RES & DEV PLANNING & TECH SERV,MIYAMAE KU,KAWASAKI,JAPAN
KANAMORI, M
HAMAGUCHI, T
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,DIV RES & DEV PLANNING & TECH SERV,MIYAMAE KU,KAWASAKI,JAPAN
NEC CORP,DIV RES & DEV PLANNING & TECH SERV,MIYAMAE KU,KAWASAKI,JAPAN
HAMAGUCHI, T
[J].
APPLIED PHYSICS LETTERS,
1983,
43
(03)
: 263
-
265
[6]
WAFER BONDING FOR SILICON-ON-INSULATOR TECHNOLOGIES
LASKY, JB
论文数:
0
引用数:
0
h-index:
0
LASKY, JB
[J].
APPLIED PHYSICS LETTERS,
1986,
48
(01)
: 78
-
80
[7]
METAL-TO-METAL BONDING USING AN OXIDIZING AMBIENT ATMOSPHERE
NAYAK, D
论文数:
0
引用数:
0
h-index:
0
机构:
N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695
NAYAK, D
REISMAN, A
论文数:
0
引用数:
0
h-index:
0
机构:
N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695
REISMAN, A
TURLIK, I
论文数:
0
引用数:
0
h-index:
0
机构:
N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695
TURLIK, I
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1988,
135
(04)
: 1023
-
1025
[8]
Ohashi H., 1987, 1987 International Electron Devices Meeting, IEDM. Technical Digeset (Cat. No.87CH2515-5), P678, DOI 10.1109/IEDM.1987.191519
[9]
A DIELECTRICALLY ISOLATED PHOTODIODE ARRAY BY SILICON-WAFER DIRECT BONDING
OHURA, J
论文数:
0
引用数:
0
h-index:
0
OHURA, J
TSUKAKOSHI, T
论文数:
0
引用数:
0
h-index:
0
TSUKAKOSHI, T
FUKUDA, K
论文数:
0
引用数:
0
h-index:
0
FUKUDA, K
SHIMBO, M
论文数:
0
引用数:
0
h-index:
0
SHIMBO, M
OHASHI, H
论文数:
0
引用数:
0
h-index:
0
OHASHI, H
[J].
IEEE ELECTRON DEVICE LETTERS,
1987,
8
(10)
: 454
-
456
[10]
CONTROLLED ETCHING OF SILICON IN CATALYZED ETHYLENEDIAMINE-PYROCATECHOL-WATER SOLUTIONS
REISMAN, A
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, New York 10598, Yorktown Heights
REISMAN, A
BERKENBLIT, M
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, New York 10598, Yorktown Heights
BERKENBLIT, M
CHAN, SA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, New York 10598, Yorktown Heights
CHAN, SA
KAUFMAN, FB
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, New York 10598, Yorktown Heights
KAUFMAN, FB
GREEN, DC
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, New York 10598, Yorktown Heights
GREEN, DC
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(08)
: 1406
-
1415
←
1
2
→
共 19 条
[1]
STABILITY OF INTERFACIAL OXIDE LAYERS DURING SILICON-WAFER BONDING
AHN, KY
论文数:
0
引用数:
0
h-index:
0
机构:
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
AHN, KY
STENGL, R
论文数:
0
引用数:
0
h-index:
0
机构:
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
STENGL, R
TAN, TY
论文数:
0
引用数:
0
h-index:
0
机构:
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
TAN, TY
GOSELE, U
论文数:
0
引用数:
0
h-index:
0
机构:
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
GOSELE, U
SMITH, P
论文数:
0
引用数:
0
h-index:
0
机构:
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
SMITH, P
[J].
JOURNAL OF APPLIED PHYSICS,
1989,
65
(02)
: 561
-
563
[2]
[Anonymous], 1986, WEDDING HOME AUT, P122
[3]
A FIELD-ASSISTED BONDING PROCESS FOR SILICON DIELECTRIC ISOLATION
FRYE, RC
论文数:
0
引用数:
0
h-index:
0
FRYE, RC
GRIFFITH, JE
论文数:
0
引用数:
0
h-index:
0
GRIFFITH, JE
WONG, YH
论文数:
0
引用数:
0
h-index:
0
WONG, YH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1986,
133
(08)
: 1673
-
1677
[4]
FURUKAWA K, 1986, 18TH INT C SOL STAT, P533
[5]
EPITAXIAL FILM TRANSFER TECHNIQUE FOR PRODUCING SINGLE-CRYSTAL SI FILM ON AN INSULATING SUBSTRATE
KIMURA, M
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,DIV RES & DEV PLANNING & TECH SERV,MIYAMAE KU,KAWASAKI,JAPAN
NEC CORP,DIV RES & DEV PLANNING & TECH SERV,MIYAMAE KU,KAWASAKI,JAPAN
KIMURA, M
EGAMI, K
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,DIV RES & DEV PLANNING & TECH SERV,MIYAMAE KU,KAWASAKI,JAPAN
NEC CORP,DIV RES & DEV PLANNING & TECH SERV,MIYAMAE KU,KAWASAKI,JAPAN
EGAMI, K
KANAMORI, M
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,DIV RES & DEV PLANNING & TECH SERV,MIYAMAE KU,KAWASAKI,JAPAN
NEC CORP,DIV RES & DEV PLANNING & TECH SERV,MIYAMAE KU,KAWASAKI,JAPAN
KANAMORI, M
HAMAGUCHI, T
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,DIV RES & DEV PLANNING & TECH SERV,MIYAMAE KU,KAWASAKI,JAPAN
NEC CORP,DIV RES & DEV PLANNING & TECH SERV,MIYAMAE KU,KAWASAKI,JAPAN
HAMAGUCHI, T
[J].
APPLIED PHYSICS LETTERS,
1983,
43
(03)
: 263
-
265
[6]
WAFER BONDING FOR SILICON-ON-INSULATOR TECHNOLOGIES
LASKY, JB
论文数:
0
引用数:
0
h-index:
0
LASKY, JB
[J].
APPLIED PHYSICS LETTERS,
1986,
48
(01)
: 78
-
80
[7]
METAL-TO-METAL BONDING USING AN OXIDIZING AMBIENT ATMOSPHERE
NAYAK, D
论文数:
0
引用数:
0
h-index:
0
机构:
N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695
NAYAK, D
REISMAN, A
论文数:
0
引用数:
0
h-index:
0
机构:
N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695
REISMAN, A
TURLIK, I
论文数:
0
引用数:
0
h-index:
0
机构:
N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695
TURLIK, I
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1988,
135
(04)
: 1023
-
1025
[8]
Ohashi H., 1987, 1987 International Electron Devices Meeting, IEDM. Technical Digeset (Cat. No.87CH2515-5), P678, DOI 10.1109/IEDM.1987.191519
[9]
A DIELECTRICALLY ISOLATED PHOTODIODE ARRAY BY SILICON-WAFER DIRECT BONDING
OHURA, J
论文数:
0
引用数:
0
h-index:
0
OHURA, J
TSUKAKOSHI, T
论文数:
0
引用数:
0
h-index:
0
TSUKAKOSHI, T
FUKUDA, K
论文数:
0
引用数:
0
h-index:
0
FUKUDA, K
SHIMBO, M
论文数:
0
引用数:
0
h-index:
0
SHIMBO, M
OHASHI, H
论文数:
0
引用数:
0
h-index:
0
OHASHI, H
[J].
IEEE ELECTRON DEVICE LETTERS,
1987,
8
(10)
: 454
-
456
[10]
CONTROLLED ETCHING OF SILICON IN CATALYZED ETHYLENEDIAMINE-PYROCATECHOL-WATER SOLUTIONS
REISMAN, A
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, New York 10598, Yorktown Heights
REISMAN, A
BERKENBLIT, M
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, New York 10598, Yorktown Heights
BERKENBLIT, M
CHAN, SA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, New York 10598, Yorktown Heights
CHAN, SA
KAUFMAN, FB
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, New York 10598, Yorktown Heights
KAUFMAN, FB
GREEN, DC
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, New York 10598, Yorktown Heights
GREEN, DC
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(08)
: 1406
-
1415
←
1
2
→