INTERFACE CHARGE CONTROL OF DIRECTLY BONDED SILICON STRUCTURES

[1] STABILITY OF INTERFACIAL OXIDE LAYERS DURING SILICON-WAFER BONDING [J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (02) : 561 - 563

[2] [Anonymous], 1986, WEDDING HOME AUT, P122

[3] A FIELD-ASSISTED BONDING PROCESS FOR SILICON DIELECTRIC ISOLATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : 1673 - 1677

[4] FURUKAWA K, 1986, 18TH INT C SOL STAT, P533

[5] EPITAXIAL FILM TRANSFER TECHNIQUE FOR PRODUCING SINGLE-CRYSTAL SI FILM ON AN INSULATING SUBSTRATE [J]. APPLIED PHYSICS LETTERS, 1983, 43 (03) : 263 - 265

[6] WAFER BONDING FOR SILICON-ON-INSULATOR TECHNOLOGIES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (01) : 78 - 80

[7] METAL-TO-METAL BONDING USING AN OXIDIZING AMBIENT ATMOSPHERE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (04) : 1023 - 1025

[8] Ohashi H., 1987, 1987 International Electron Devices Meeting, IEDM. Technical Digeset (Cat. No.87CH2515-5), P678, DOI 10.1109/IEDM.1987.191519

[9] A DIELECTRICALLY ISOLATED PHOTODIODE ARRAY BY SILICON-WAFER DIRECT BONDING [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (10) : 454 - 456

[10] CONTROLLED ETCHING OF SILICON IN CATALYZED ETHYLENEDIAMINE-PYROCATECHOL-WATER SOLUTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1406 - 1415

[1] STABILITY OF INTERFACIAL OXIDE LAYERS DURING SILICON-WAFER BONDING [J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (02) : 561 - 563

[2] [Anonymous], 1986, WEDDING HOME AUT, P122

[3] A FIELD-ASSISTED BONDING PROCESS FOR SILICON DIELECTRIC ISOLATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : 1673 - 1677

[4] FURUKAWA K, 1986, 18TH INT C SOL STAT, P533

[5] EPITAXIAL FILM TRANSFER TECHNIQUE FOR PRODUCING SINGLE-CRYSTAL SI FILM ON AN INSULATING SUBSTRATE [J]. APPLIED PHYSICS LETTERS, 1983, 43 (03) : 263 - 265

[6] WAFER BONDING FOR SILICON-ON-INSULATOR TECHNOLOGIES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (01) : 78 - 80

[7] METAL-TO-METAL BONDING USING AN OXIDIZING AMBIENT ATMOSPHERE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (04) : 1023 - 1025

[8] Ohashi H., 1987, 1987 International Electron Devices Meeting, IEDM. Technical Digeset (Cat. No.87CH2515-5), P678, DOI 10.1109/IEDM.1987.191519

[9] A DIELECTRICALLY ISOLATED PHOTODIODE ARRAY BY SILICON-WAFER DIRECT BONDING [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (10) : 454 - 456

[10] CONTROLLED ETCHING OF SILICON IN CATALYZED ETHYLENEDIAMINE-PYROCATECHOL-WATER SOLUTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1406 - 1415