SCREENING OF IMPURITIES IN SEMICONDUCTORS - MUONIUM IN GERMANIUM, SILICON, AND DIAMOND

被引：21

作者：

MANNINEN, M ^{[1
]}

MEIER, PF ^{[1
]}

机构：

[1] UNIV ZURICH,INST PHYS,CH-8001 ZURICH,SWITZERLAND

来源：

PHYSICAL REVIEW B | 1982年 / 26卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.26.6690

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6690 / 6695

页数：6

共 28 条

[1] SPHERICAL-SOLID MODEL - APPLICATION TO X-RAY EDGES IN LI, NA, AND AL [J].

ALMBLADH, CO ;

BARTH, UV .

PHYSICAL REVIEW B, 1976, 13 (08) :3307-3319

[2] SELF-CONSISTENT GREENS FUNCTION CALCULATION OF IDEAL SI VACANCY [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW LETTERS, 1978, 41 (13) :892-895

[3] NEW SELF-CONSISTENT APPROACH TO THE ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1979, 19 (10) :4965-4979

[4] SELF-CONSISTENT METHOD FOR POINT-DEFECTS IN SEMICONDUCTORS - APPLICATION TO VACANCY IN SILICON [J].

BERNHOLC, J ;

LIPARI, NO ;

PANTELIDES, ST .

PHYSICAL REVIEW LETTERS, 1978, 41 (13) :895-899

[5] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .2. SELF-CONSISTENT FORMULATION AND APPLICATION TO THE VACANCY IN SILICON [J].

BERNHOLC, J ;

LIPARI, NO ;

PANTELIDES, ST .

PHYSICAL REVIEW B, 1980, 21 (08) :3545-3562

[6]

BERNHOLC J, 1981, DEFECTS RAD EFFECTS

[7]

COHEN ML, 1970, SOLID STATE PHYS, V24, P38

[8] NON-LINEAR IMPURITY SCREENING IN SEMICONDUCTORS [J].

CORNOLTI, F ;

RESTA, R .

PHYSICAL REVIEW B, 1978, 17 (08) :3239-3242

[9] NON-LINEAR SCREENING OF POSITIVE POINT CHARGES IN DIAMOND, SILICON, AND GERMANIUM [J].

CSAVINSZKY, P ;

BROWNSTEIN, KR .

PHYSICAL REVIEW B, 1981, 24 (08) :4566-4570

[10] A REVIEW OF THE EXPERIMENTAL RESULTS ON IMPURITY CENTERS IN ELEMENTAL SEMICONDUCTORS OBTAINED BY MU-SR AND OTHER TECHNIQUES [J].

ESTLE, TL .

HYPERFINE INTERACTIONS, 1981, 8 (4-6) :365-370

← 1 2 3 →