DOPANT DEPTH DISTRIBUTIONS AS A FUNCTION OF GROWTH TEMPERATURE IN IN-DOPED (100)SI GROWN BY MOLECULAR-BEAM EPITAXY

被引：16

作者：

ROCKETT, A

BARNETT, SA

GREENE, JE

KNALL, J

SUNDGREN, JE

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,MAT RES LAB,DEPT MET,URBANA,IL 61801

[2] LINKOPING UNIV,DEPT PHYS,S-58183 LINKOPING,SWEDEN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1116/1.573330

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：855 / 859

页数：5

共 11 条

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[10] INDIUM INCORPORATION DURING THE GROWTH OF (100) SI BY MOLECULAR-BEAM EPITAXY - SURFACE SEGREGATION AND RECONSTRUCTION [J].

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