STRAIN IN EPITAXIAL GAAS ON CAF2/SI(111)

被引:13
作者
SCHOWALTER, LJ
AYERS, JE
GHANDHI, SK
HASHIMOTO, S
GIBSON, WM
LEGOUES, FK
CLAXTON, PA
机构
[1] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12181
[2] RENSSELAER POLYTECH INST,DEPT ELECT COMP & SYST ENGN,TROY,NY 12181
[3] SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222
[4] IBM CORP,TJ WATSON RES CTR,YORKTOWN HTS,NY 10598
[5] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S10 2TN,S YORKSHIRE,ENGLAND
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 02期
关键词
D O I
10.1116/1.584819
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:246 / 249
页数:4
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