CHARGE-PUMPING STUDY OF RADIATION-INDUCED DEFECTS AT SI-SIO2 INTERFACE

被引：4

作者：

AUTRAN, JL ^{[1
]}

BALLAND, B ^{[1
]}

VALLARD, JP ^{[1
]}

BABOT, D ^{[1
]}

机构：

[1] INST NATL SCI APPL,EQUIPE CONTROLE NON DESTRUCTIF RAYONNEMENTS IONISANTS,F-69621 VILLEURBANNE,FRANCE

来源：

JOURNAL DE PHYSIQUE III | 1994年 / 4卷 / 09期

关键词：

D O I：

10.1051/jp3:1994235

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied electrical defects of [100] Si-SiO2 interface created by gamma rays (Co-60) in submicrometer MOS transistors. By means of three-level charge pumping, the energy distribution of interface-trap parameters (emission times, cross sections, state density) has been determined in most of the silicon bandgap after different irradiations. We have shown the possibility of characterizing, using standard and three-level charge pumping, the oxide traps near the interface (border traps) induced by ionizing radiations. Their behaviour in emission regime is here investigated in terms of tunneling mechanism. We propose a new method, based on the three-level charge pumping technique, to determine the energy distribution of border traps.

引用

收藏

页码：1707 / 1721

页数：15

相关论文

共 40 条

[1] NUMERICAL-SIMULATION OF 3-LEVEL CHARGE PUMPING [J].

ANCONA, MG ;

SAKS, NS .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (09) :4415-4421

[2] CHARACTERIZATION OF SI-SIO2 INTERFACE STATES - COMPARISON BETWEEN DIFFERENT CHARGE-PUMPING AND CAPACITANCE TECHNIQUES [J].

AUTRAN, JL ;

SEIGNEUR, F ;

PLOSSU, C ;

BALLAND, B .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (06) :3932-3935

[3] A NEW 3RD-LEVEL CHARGE-PUMPING METHOD FOR ACCURATE DETERMINATION OF INTERFACE-TRAP PARAMETERS IN METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTORS [J].

AUTRAN, JL ;

BALLAND, B .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1994, 65 (06) :2141-2142

[4] APPLICATION OF 3-LEVEL CHARGE PUMPING ON SUBMICRONIC MOS-TRANSISTORS [J].

AUTRAN, JL ;

BALLAND, B ;

PLOSSU, C ;

SEIGNEUR, F ;

GABORIEAU, LM .

JOURNAL DE PHYSIQUE III, 1993, 3 (01) :33-45

[5] 3-LEVEL CHARGE PUMPING ON SUBMICRONIC MOS-TRANSISTORS [J].

AUTRAN, JL ;

DJAHLI, F ;

BALLAND, B ;

PLOSSU, C ;

GABORIEAU, LM .

SOLID STATE COMMUNICATIONS, 1992, 84 (06) :607-611

[6]

AUTRAN JL, 1994, IN PRESS IBM J RES D

[7] INTERFACIAL TUNNEL INTERACTION IN MOS ELEMENTS IN DEPLETION [J].

BALLAND, B ;

PINARD, P .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 47 (01) :251-258

[8] THE APPLICATION OF DEEP LEVEL TRANSIENT SPECTROSCOPY TO THE MEASUREMENT OF RADIATION-INDUCED INTERFACE STATE SPECTRA [J].

BARNES, C ;

ZIETLOW, T ;

NAKAMURA, K .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1988, 35 (06) :1197-1202

[9] TIME EVOLUTION OF CAPTURE CROSS-SECTIONS OF RADIATION-INDUCED SI/SIO2 INTERFACE TRAPS STUDIED BY SINGLE-FREQUENCY AC CONDUCTANCE TECHNIQUE [J].

CHEN, WL ;

MA, TP .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (02) :860-866

[10] EVOLUTION OF CAPTURE CROSS-SECTION OF RADIATION-INDUCED INTERFACE TRAPS IN MOSFETS AS STUDIED BY A RAPID CHARGE PUMPING TECHNIQUE [J].

CHEN, WL ;

BALASINSKI, A ;

MA, TP .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1992, 39 (06) :2152-2157

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