APPLICATION OF 3-LEVEL CHARGE PUMPING ON SUBMICRONIC MOS-TRANSISTORS

被引：2

作者：

AUTRAN, JL ^{[1
]}

BALLAND, B ^{[1
]}

PLOSSU, C ^{[1
]}

SEIGNEUR, F ^{[1
]}

GABORIEAU, LM ^{[1
]}

机构：

[1] CO IBM FRANCE,USINE CORBEIL ESSONNES,F-91105 CORBEIL ESSONNES,FRANCE

来源：

JOURNAL DE PHYSIQUE III | 1993年 / 3卷 / 01期

关键词：

D O I：

10.1051/jp3:1993117

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have used a three-level charge pumping technique on submicronic MOS transistors. The energy distribution of capture cross sections of electron Si/SiO2 interface states has been determined, showing a great variation of this values with energy. Taking into account this dependency, a very simple method to calculate the energy distribution of interface states density on an energy scale in the silicon bandgap including the midgap is proposed. The results are compared with values obtained with the two-level standard charge pumping technique.

引用

页码：33 / 45

页数：13

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