CALCULATION OF LATERAL DISTRIBUTION OF INTERFACE TRAPS ALONG MIS CHANNEL

被引：3

作者：

HENNING, AK

DIMAURO, JA

机构：

[1] Thayer School of Engineering Dartmouth College, Hanover

[2] Harris Corporation, 1680 University Ave., Rochester

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 16期

关键词：

SEMICONDUCTOR DEVICES AND MATERIALS; METALOXIDE SEMICONDUCTOR STRUCTURES AND DEVICES;

D O I：

10.1049/el:19910906

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The lateral distribution of interface traps, averaged over the semiconductor band gap, is calculated in an MIS structure. The calculation is based on the well known charge-pumping technique. The calculation has been applied to p-channel MOSFETs.

引用

页码：1445 / 1447

页数：3

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