SPATIAL-DISTRIBUTION OF SURFACE-STATES IN MOS-TRANSISTORS

被引：12

作者：

PLOSSU, C

CHOQUET, C

LUBOWIECKI, V

BALLAND, B

机构：

来源：

SOLID STATE COMMUNICATIONS | 1988年 / 65卷 / 10期

关键词：

D O I：

10.1016/0038-1098(88)90929-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1231 / 1235

页数：5

共 15 条

[1] CHARGE PUMPING IN MOS DEVICES [J].

BRUGLER, JS ;

JESPERS, PGA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (03) :297-+

[2]

Declercq M., 1974, Revue HF, V9, P244

[3] USE OF CHARGE PUMPING CURRENTS TO MEASURE SURFACE STATE DENSITIES IN MOS-TRANSISTORS [J].

ELLIOT, ABM .

SOLID-STATE ELECTRONICS, 1976, 19 (03) :241-247

[4]

FOJT R, 1987, AVR INT C INFOS 87 L

[5] A RELIABLE APPROACH TO CHARGE-PUMPING MEASUREMENTS IN MOS-TRANSISTORS [J].

GROESENEKEN, G ;

MAES, HE ;

BELTRAN, N ;

DEKEERSMAECKER, RF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) :42-53

[6] PROFILING OF STRESS-INDUCED INTERFACE STATES IN SHORT CHANNEL MOSFETS USING A COMPOSITE CHARGE PUMPING TECHNIQUE [J].

HADDARA, H ;

CRISTOLOVEANU, S .

SOLID-STATE ELECTRONICS, 1986, 29 (08) :767-772

[7] EVALUATION OF HOT CARRIER DEGRADATION OF N-CHANNEL MOSFETS WITH THE CHARGE PUMPING TECHNIQUE [J].

HEREMANS, P ;

MAES, HE ;

SAKS, N .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (07) :428-430

[8] HOT-ELECTRON AND HOLE-EMISSION EFFECTS IN SHORT N-CHANNEL MOSFETS [J].

HOFMANN, KR ;

WERNER, C ;

WEBER, W ;

DORDA, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) :691-699

[9]

KLASSEN FM, 1971, IEEE T ELECTRON DEV, V18, P887

[10] DETERMINATION OF SPATIAL SURFACE-STATE DENSITY DISTRIBUTION IN MOS AND SIMOS TRANSISTORS AFTER CHANNEL HOT-ELECTRON INJECTION [J].

MAES, HE ;

GROESENEKEN, G .

ELECTRONICS LETTERS, 1982, 18 (09) :372-374

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