3-LEVEL CHARGE PUMPING ON SUBMICRONIC MOS-TRANSISTORS

被引：9

作者：

AUTRAN, JL ^{[1
]}

DJAHLI, F ^{[1
]}

BALLAND, B ^{[1
]}

PLOSSU, C ^{[1
]}

GABORIEAU, LM ^{[1
]}

机构：

[1] CO IBM FRANCE,USINE CORBEIL ESSONNES,F-91105 CORBEIL ESSONNES,FRANCE

来源：

SOLID STATE COMMUNICATIONS | 1992年 / 84卷 / 06期

关键词：

D O I：

10.1016/0038-1098(92)90200-S

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A modified three-level charge pumping technique on submicronic MOS transistors is used to determine the energetic distribution of capture cross sections of electron Si/SiO2 interface states and their density on an energy scale in the silicon bandgap including the midgap. The results are compared with values obtained by standard charge pumping technique.

引用

页码：607 / 611

页数：5

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