EVOLUTION OF CAPTURE CROSS-SECTION OF RADIATION-INDUCED INTERFACE TRAPS IN MOSFETS AS STUDIED BY A RAPID CHARGE PUMPING TECHNIQUE

被引：6

作者：

CHEN, WL ^{[1
]}

BALASINSKI, A ^{[1
]}

MA, TP ^{[1
]}

机构：

[1] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1992年 / 39卷 / 06期

关键词：

D O I：

10.1109/23.211416

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using a rapid charge pumping technique, we found that the mean capture cross-section of interface traps in MOSFETs sharply decreased immediately after irradiation. Further changes of the capture cross-section during subsequent relaxation depended on the gate bias during both irradiation and storage. Radiation dose dependence has also been investigated. Possible mechanisms and correlations between interface-trap density and capture cross-section are discussed.

引用

页码：2152 / 2157

页数：6

共 8 条

[1] TIME EVOLUTION OF CAPTURE CROSS-SECTIONS OF RADIATION-INDUCED SI/SIO2 INTERFACE TRAPS STUDIED BY SINGLE-FREQUENCY AC CONDUCTANCE TECHNIQUE [J].