LATENT THERMALLY ACTIVATED INTERFACE-TRAP GENERATION IN MOS DEVICES

被引：45

作者：

SCHWANK, JR

FLEETWOOD, DM

SHANEYFELT, MR

WINOKUR, PS

机构：

[1] Sandia National Laboratories, Albuquerque, NM

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 04期

关键词：

D O I：

10.1109/55.145021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A large increase in interface-trap density (up to a factor of 5) has been observed in commercial MOS devices at very long times after irradiation (> 10(6) s). This "latent" buildup occurs after an initial apparent saturation of interface-trap density, which occurs typically within approximately 10(2)-10(4) s after irradiation. The latent buildup is thermally activated, with an activation energy of approximately 0.47 eV. Within experimental uncertainty, this is equal to the activation energy (approximately 0.45 eV) for the diffusion of molecular hydrogen in bulk fused silica. Latent interface-trap buildup can degrade the performance of devices in low-dose-rate radiation environments (e.g., space).

引用

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页码：203 / 205

页数：3

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