INFLUENCE OF TARGET MATERIAL ON SPUTTER ETCHING PROCESSES

被引：15

作者：

DIMIGEN, H ^{[1
]}

LUTHJE, H ^{[1
]}

机构：

[1] PHILIPS FORSCH LAB HAMBURG GMBH, HAMBURG, FED REP GER

来源：

关键词：

D O I：

10.1016/0040-6090(75)90018-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：155 / 163

页数：9

共 7 条

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[2] Espe W., 1966, MATERIALS HIGH VACUU
[3] REACTIVE SPUTTERING OF METALS IN OXIDIZING ATMOSPHERES
HELLER, J
[J]. THIN SOLID FILMS, 1973, 7 (02) : 163 - 176
[4] EFFECT OF OXYGEN ON RF-SPUTTERING RATE OF SIO2
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WINTERS, HF
MAISSEL, LI
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1968, 5 (03): : 84 - &
[5] MAISSEL LI, 1970, HDB THIN FILM TECHNO, pCH7
[6] TSUI RTC, 1967, SEMICOND PROD SOLID, V10, P33
[7] INTERACTION OF PHOTORESISTS WITH METALS AND OXIDES DURING RF SPUTTER-ETCHING
VOSSEN, JL
DAVIDSON, EB
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (12) : 1708 - &