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MEV-ENERGY AS+ IMPLANTATION INTO SI - EXTENDED-DEFECT REDUCTION AND PLANAR N-P-N TRANSISTOR FABRICATION

被引：9
作者：
TAKAHASHI, M
KONAKA, S
KAJIYAMA, K
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 10期
关键词：
D O I：
10.1063/1.331749
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：6041 / 6043
页数：3
相关论文
共 6 条
[1]   INSITU SELF ION-BEAM ANNEALING OF DAMAGE IN SI DURING HIGH-ENERGY (0.53 MEV-2.56 MEV) AS+ ION-IMPLANTATION [J].
NAKATA, J ;
TAKAHASHI, M ;
KAJIYAMA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) :2211-2221
[2]   NEW ADVANCES IN SEMICONDUCTOR IMPLANTATION [J].
RUPPRECHT, HS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (05) :1669-1674
[3]  
RYSSEL H, 1978 INT EL DEV M, P583
[4]  
SAKAI T, 1981 IEEE INT SOL ST, P216
[5]   HIGH-ENERGY AS+ ION-IMPLANTATION INTO SI - ARSENIC PROFILES AND ELECTRICAL ACTIVATION CHARACTERISTICS [J].
TAKAHASHI, M ;
NAKATA, J ;
KAJIYAMA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) :2205-2209
[6]   EXPERIMENTAL EVALUATION OF HIGH ENERGY ION IMPLANTATION GRADIENTS FOR POSSIBLE FABRICATION OF A TRANSISTOR PEDESTAL COLLECTOR [J].
ZIEGLER, JF ;
CROWDER, BL ;
KLEINFELDER, WJ .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1971, 15 (06) :452-+
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