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GROWTH AND PROPERTIES OF BULK INDIUM-PHOSPHIDE DOUBLY DOPED WITH CADMIUM AND SULFUR
被引:12
作者
:
FORNARI, R
论文数:
0
引用数:
0
h-index:
0
FORNARI, R
KUMAR, J
论文数:
0
引用数:
0
h-index:
0
KUMAR, J
CURTI, M
论文数:
0
引用数:
0
h-index:
0
CURTI, M
ZUCCALLI, G
论文数:
0
引用数:
0
h-index:
0
ZUCCALLI, G
机构
:
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1989年
/ 96卷
/ 04期
关键词
:
D O I
:
10.1016/0022-0248(89)90639-8
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:795 / 801
页数:7
相关论文
共 16 条
[1]
DOUBLE DOPED LOW ETCH PIT DENSITY INP WITH REDUCED OPTICAL-ABSORPTION
BALLMAN, AA
论文数:
0
引用数:
0
h-index:
0
BALLMAN, AA
GLASS, AM
论文数:
0
引用数:
0
h-index:
0
GLASS, AM
NAHORY, RE
论文数:
0
引用数:
0
h-index:
0
NAHORY, RE
BROWN, H
论文数:
0
引用数:
0
h-index:
0
BROWN, H
[J].
JOURNAL OF CRYSTAL GROWTH,
1983,
62
(01)
: 198
-
202
[2]
NEW DISLOCATION ETCHANT FOR INP
CHU, SNG
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
CHU, SNG
JODLAUK, CM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
JODLAUK, CM
BALLMAN, AA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
BALLMAN, AA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(02)
: 352
-
354
[3]
DISLOCATION-FREE LEC GROWTH OF INP DOPED WITH GE AND S
COCKAYNE, B
论文数:
0
引用数:
0
h-index:
0
COCKAYNE, B
BAILEY, T
论文数:
0
引用数:
0
h-index:
0
BAILEY, T
MACEWAN, WR
论文数:
0
引用数:
0
h-index:
0
MACEWAN, WR
[J].
JOURNAL OF CRYSTAL GROWTH,
1986,
76
(02)
: 507
-
510
[4]
GROWTH OF LARGE DIAMETER DISLOCATION-FREE INDIUM-PHOSPHIDE INGOTS
FARGES, JP
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS
FARGES, JP
SCHILLER, C
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS
SCHILLER, C
BARTELS, WJ
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS
BARTELS, WJ
[J].
JOURNAL OF CRYSTAL GROWTH,
1987,
83
(02)
: 159
-
166
[5]
METALLOGRAPHIC DEVELOPMENT OF CRYSTAL DEFECTS IN INP
HUBER, A
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF LABS CENT RECH,DOMAINE CORBEVILLE,91401 ORSAY,FRANCE
THOMSON CSF LABS CENT RECH,DOMAINE CORBEVILLE,91401 ORSAY,FRANCE
HUBER, A
LINH, NT
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF LABS CENT RECH,DOMAINE CORBEVILLE,91401 ORSAY,FRANCE
THOMSON CSF LABS CENT RECH,DOMAINE CORBEVILLE,91401 ORSAY,FRANCE
LINH, NT
[J].
JOURNAL OF CRYSTAL GROWTH,
1975,
29
(01)
: 80
-
84
[6]
GROWTH OF P-TYPE INP SINGLE-CRYSTALS BY THE TEMPERATURE-GRADIENT METHOD
ITO, K
论文数:
0
引用数:
0
h-index:
0
ITO, K
ITO, H
论文数:
0
引用数:
0
h-index:
0
ITO, H
[J].
JOURNAL OF CRYSTAL GROWTH,
1978,
45
(01)
: 248
-
251
[7]
GROWTH AND CHARACTERIZATION OF ISOELECTRONICALLY DOUBLE-DOPED SEMIINSULATING INP(FE) SINGLE-CRYSTALS
KATSUI, A
论文数:
0
引用数:
0
h-index:
0
KATSUI, A
TOHNO, S
论文数:
0
引用数:
0
h-index:
0
TOHNO, S
[J].
JOURNAL OF CRYSTAL GROWTH,
1986,
79
(1-3)
: 287
-
290
[8]
THERMAL-STABILITY OF (TI+ZN)-CO-DOPED SEMI-INSULATING INP SINGLE-CRYSTALS
KATSUI, A
论文数:
0
引用数:
0
h-index:
0
KATSUI, A
[J].
JOURNAL OF CRYSTAL GROWTH,
1988,
89
(04)
: 612
-
613
[9]
KUMAR J, 1988, 1988 P IT CRYST GROW, P53
[10]
LAMBERT B, 1986, 1986 P C SEM 3 5 MAT, P487
←
1
2
→
共 16 条
[1]
DOUBLE DOPED LOW ETCH PIT DENSITY INP WITH REDUCED OPTICAL-ABSORPTION
BALLMAN, AA
论文数:
0
引用数:
0
h-index:
0
BALLMAN, AA
GLASS, AM
论文数:
0
引用数:
0
h-index:
0
GLASS, AM
NAHORY, RE
论文数:
0
引用数:
0
h-index:
0
NAHORY, RE
BROWN, H
论文数:
0
引用数:
0
h-index:
0
BROWN, H
[J].
JOURNAL OF CRYSTAL GROWTH,
1983,
62
(01)
: 198
-
202
[2]
NEW DISLOCATION ETCHANT FOR INP
CHU, SNG
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
CHU, SNG
JODLAUK, CM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
JODLAUK, CM
BALLMAN, AA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
BALLMAN, AA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(02)
: 352
-
354
[3]
DISLOCATION-FREE LEC GROWTH OF INP DOPED WITH GE AND S
COCKAYNE, B
论文数:
0
引用数:
0
h-index:
0
COCKAYNE, B
BAILEY, T
论文数:
0
引用数:
0
h-index:
0
BAILEY, T
MACEWAN, WR
论文数:
0
引用数:
0
h-index:
0
MACEWAN, WR
[J].
JOURNAL OF CRYSTAL GROWTH,
1986,
76
(02)
: 507
-
510
[4]
GROWTH OF LARGE DIAMETER DISLOCATION-FREE INDIUM-PHOSPHIDE INGOTS
FARGES, JP
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS
FARGES, JP
SCHILLER, C
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS
SCHILLER, C
BARTELS, WJ
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS
BARTELS, WJ
[J].
JOURNAL OF CRYSTAL GROWTH,
1987,
83
(02)
: 159
-
166
[5]
METALLOGRAPHIC DEVELOPMENT OF CRYSTAL DEFECTS IN INP
HUBER, A
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF LABS CENT RECH,DOMAINE CORBEVILLE,91401 ORSAY,FRANCE
THOMSON CSF LABS CENT RECH,DOMAINE CORBEVILLE,91401 ORSAY,FRANCE
HUBER, A
LINH, NT
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF LABS CENT RECH,DOMAINE CORBEVILLE,91401 ORSAY,FRANCE
THOMSON CSF LABS CENT RECH,DOMAINE CORBEVILLE,91401 ORSAY,FRANCE
LINH, NT
[J].
JOURNAL OF CRYSTAL GROWTH,
1975,
29
(01)
: 80
-
84
[6]
GROWTH OF P-TYPE INP SINGLE-CRYSTALS BY THE TEMPERATURE-GRADIENT METHOD
ITO, K
论文数:
0
引用数:
0
h-index:
0
ITO, K
ITO, H
论文数:
0
引用数:
0
h-index:
0
ITO, H
[J].
JOURNAL OF CRYSTAL GROWTH,
1978,
45
(01)
: 248
-
251
[7]
GROWTH AND CHARACTERIZATION OF ISOELECTRONICALLY DOUBLE-DOPED SEMIINSULATING INP(FE) SINGLE-CRYSTALS
KATSUI, A
论文数:
0
引用数:
0
h-index:
0
KATSUI, A
TOHNO, S
论文数:
0
引用数:
0
h-index:
0
TOHNO, S
[J].
JOURNAL OF CRYSTAL GROWTH,
1986,
79
(1-3)
: 287
-
290
[8]
THERMAL-STABILITY OF (TI+ZN)-CO-DOPED SEMI-INSULATING INP SINGLE-CRYSTALS
KATSUI, A
论文数:
0
引用数:
0
h-index:
0
KATSUI, A
[J].
JOURNAL OF CRYSTAL GROWTH,
1988,
89
(04)
: 612
-
613
[9]
KUMAR J, 1988, 1988 P IT CRYST GROW, P53
[10]
LAMBERT B, 1986, 1986 P C SEM 3 5 MAT, P487
←
1
2
→