PULSED-LASER ANNEALING OF GAAS SURFACE STUDIED BY TIME-RESOLVED 2ND-HARMONIC GENERATION IN REFLECTION

被引：17

作者：

AKHMANOV, SA ^{[1
]}

KOROTEEV, NI ^{[1
]}

PAITIAN, GA ^{[1
]}

SHUMAY, IL ^{[1
]}

GALJAUTDINOV, MF ^{[1
]}

KHAIBULLIN, IB ^{[1
]}

SHTYRKOV, EI ^{[1
]}

机构：

[1] ACAD SCI USSR,INST PHYS TECH,KAZAN 420029,USSR

来源：

OPTICS COMMUNICATIONS | 1983年 / 47卷 / 03期

关键词：

D O I：

10.1016/0030-4018(83)90118-9

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：202 / 204

页数：3

共 14 条

[1] OPTICAL SECOND-HARMONIC GENERATION IN REFLECTION FROM MEDIA WITH INVERSION SYMMETRY
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LEE, CH
[J]. PHYSICAL REVIEW, 1968, 174 (03): : 813 - +
[2] SOME FEATURES OF LASER ANNEALING OF IMPLANTED SILICON LAYERS
KHAIBULLIN, IB
SHTYRKOV, EI
ZARIPOV, MM
BAYAZITOV, RM
GALJAUTDINOV, MF
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (3-4): : 225 - 233
[3] PICOSECOND TIME-RESOLVED PLASMA AND TEMPERATURE-INDUCED CHANGES OF REFLECTIVITY AND TRANSMISSION IN SILICON
LIU, JM
KURZ, H
BLOEMBERGEN, N
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (07) : 643 - 646
[4] RAMAN MEASUREMENT OF LATTICE TEMPERATURE DURING PULSED LASER-HEATING OF SILICON
LO, HW
COMPAAN, A
[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (24) : 1604 - 1607
[5] PULSED RAMAN MEASUREMENT OF THE ONSET OF RECRYSTALLIZATION IN LASER ANNEALING
LO, HW
COMPAAN, A
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (03) : 179 - 181
[6] LUTHY W, 1979, APPL PHYS LETT, V35, P873, DOI 10.1063/1.90989
[7] MEASUREMENT OF LATTICE TEMPERATURE OF SILICON DURING PULSED LASER ANNEALING
STRITZKER, B
POSPIESZCZYK, A
TAGLE, JA
[J]. PHYSICAL REVIEW LETTERS, 1981, 47 (05) : 356 - 358
[8] CALCULATION OF THE DYNAMICS OF SURFACE MELTING DURING LASER ANNEALING
SURKO, CM
SIMONS, AL
AUSTON, DH
GOLOVCHENKO, JA
SLUSHER, RE
VENKATESAN, TNC
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (10) : 635 - 637
[9] VANVECHTEN IA, 1981, SOLID STATE COMM, P1285
[10] PLASMA ANNEALING STATE OF SEMICONDUCTORS - PLASMON CONDENSATION TO A SUPER-CONDUCTIVITY-LIKE STATE AT 1000-K
VANVECHTEN, JA
COMPAAN, AD
[J]. SOLID STATE COMMUNICATIONS, 1981, 39 (08) : 867 - 873

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