HEAVILY SI OR BE DOPED MBE GAAS GROWN AT LOW-TEMPERATURES

被引：19

作者：

MCQUAID, SA

NEWMAN, RC

MISSOUS, M

OHAGAN, S

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT ELECT ENGN & ELECTR,POB 88,MANCHESTER M60 1QD,LANCS,ENGLAND

[2] UNIV MANCHESTER,INST SCI & TECHNOL,CTR ELECTR MAT,MANCHESTER M60 1QD,LANCS,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90673-K

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Infrared absorption due to the localized vibrational modes of Si and Be has been investigated in low temperature molecular beam epitaxial GaAs. A spectrum from Si(Ga)-V(Ga) has been found, but pairing of Be(Ga) was not detected. Anneals of the Si doped layers led to Si-site switching and an apparent loss of silicon from solution. A comparison is made with a previous study of neutron irradiated Si doped GaAs.

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收藏

页码：515 / 518

页数：4

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