GROWTH AND THERMODYNAMIC ANALYSIS OF ATOMIC LAYER EPITAXY OF ZNSXSE1-X

被引：7

作者：

KOUKITU, A

IKEDA, H

MIYAZAWA, T

SEKI, H

机构：

[1] Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Koganei, Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 10B期

关键词：

ATOMIC LAYER EPITAXY (ALE); II-VI-ALLOY SEMICONDUCTORS; ZNSSE; THERMODYNAMIC ANALYSIS;

D O I：

10.1143/JJAP.31.L1463

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnSxSe1-x epitaxial layers have been grown by atomic layer epitaxy (ALE) for the first time, using elemental Zn, H2S and H2Se as source materials at atmospheric pressure. The high-crystalline-quality layer is obtained at a sulfur content of about 6%, where the epitaxial layer is closely lattice-matched to the GaAs substrate. The vapor-solid distribution relationship for the group VI elements is experimentally obtained. A thermodynamic model is developed for the ALE growth of ZnSxSe1-x alloys. It is shown that the solid composition grown by atmospheric-pressure ALE is thermodynamically controlled.

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收藏

页码：L1463 / L1466

页数：4

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