INFLUENCE OF SURFACE-DEFECTS ON THE ELECTRICAL BEHAVIOR OF ALUMINUM-POROUS SILICON JUNCTIONS

被引：30

作者：

CADET, C

DERESMES, D

VUILLAUME, D

STIEVENARD, D

机构：

[1] Institut d'Electronique et de Microélectronique du Nord (IEMN), UMR 9929 du CNRS, Dept. Institut Supérieur d'Electronique du Nord (ISEN), 59046 Lille Cedex

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 21期

关键词：

D O I：

10.1063/1.111438

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using transient-current measurements on porous silicon layers made on p+ silicon substrate, we characterize the surface defects of the porous silicon material, i.e., the defects located at the interface between porous silicon and a thin layer of native oxide. An energy location near midgap (these defects can be efficient radiative lifetime killers) and a trap concentration in close agreement with the number of trivalent silicon defects-as measured by electron spin resonance-are deduced.

引用

页码：2827 / 2829

页数：3

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