INTRINSIC GETTERING OF CR IMPURITIES IN P-TYPE CZ SILICON

被引：4

作者：

ADEGBOYEGA, GA ^{[1
]}

POGGI, A ^{[1
]}

机构：

[1] CNR,IST LAMEL,I-40126 BOLOGNA,ITALY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 121卷 / 01期

关键词：

D O I：

10.1002/pssa.2211210121

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The gettering of chromium impurities by means of high temperature oxygen precipitates is studied by means of resistivity, lifetime, and infrared absorption spectroscopy measurements. The results show that the density of interstitial oxygen, following an oxygen precipitation step, is rather low, and the presence of this interstitial oxygen is closely connected with the formation of the so‐called new donor defect. Most of the high temperature (T = 1000°C) oxygen precipitates seem to appear in the form of SiO2 and there is a strong evidence of a redissolution of the oxygen precipitates due to Cr diffusion. The presence of this high temperature oxygen precipitate shows a high efficiency in the gettering of Cr impurities. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：181 / 185

页数：5

共 21 条

[1] INVESTIGATION OF THE OXYGEN-RELATED LATTICE-DEFECTS IN CZOCHRALSKI SILICON BY MEANS OF ELECTRON-MICROSCOPY TECHNIQUES [J].