PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE FROM 1,1,3,3,5,5-HEXAMETHYLCYCLOTRISILAZANE AND AMMONIA

[1] BELYI VI, 1986, MIKROELECTRONICA, V15, P146

[2] INFLUENCE OF DEPOSITION TEMPERATURE, GAS-PRESSURE, GAS-PHASE COMPOSITION, AND RF FREQUENCY ON COMPOSITION AND MECHANICAL-STRESS OF PLASMA SILICON-NITRIDE LAYERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (04) : 893 - 898

[3] ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON NITRIDE AND SILICON OXIDE FILMS ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : 300 - &

[4] Gazicki M., 1983, Plasma Chemistry and Plasma Processing, V3, P279, DOI 10.1007/BF00564629

[5] EFFECTS OF PROCESSING ON RADIATION-DAMAGE IN SIO2 [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 644 - 647

[6] HENZEL R, 1984, J ELECTROCHEM SOC, V131, P1681

[7] PREPARATION OF AMINO GROUP-CONTAINING POLYMERS BY PLASMA POLYMERIZATION [J]. JOURNAL OF POLYMER SCIENCE PART A-POLYMER CHEMISTRY, 1985, 23 (05) : 1445 - 1454

[8] ELECTRICAL-PROPERTIES OF METAL-POLYMER (POLYSILOXANE)-SILICON STRUCTURES AND APPLICATION OF POLYSILOXANE TO PASSIVATION OF SEMICONDUCTOR-DEVICES [J]. THIN SOLID FILMS, 1976, 33 (01) : 35 - 41

[9] PLASMA ASSISTED CHEMICAL VAPOR-DEPOSITED THIN-FILMS FOR MICROELECTRONIC APPLICATIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (05): : 1159 - 1167

[10] THE VARIATION OF PHYSICAL-PROPERTIES OF PLASMA-DEPOSITED SILICON-NITRIDE AND OXYNITRIDE WITH THEIR COMPOSITIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) : 2348 - 2358

[1] BELYI VI, 1986, MIKROELECTRONICA, V15, P146

[2] INFLUENCE OF DEPOSITION TEMPERATURE, GAS-PRESSURE, GAS-PHASE COMPOSITION, AND RF FREQUENCY ON COMPOSITION AND MECHANICAL-STRESS OF PLASMA SILICON-NITRIDE LAYERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (04) : 893 - 898

[3] ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON NITRIDE AND SILICON OXIDE FILMS ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : 300 - &

[4] Gazicki M., 1983, Plasma Chemistry and Plasma Processing, V3, P279, DOI 10.1007/BF00564629

[5] EFFECTS OF PROCESSING ON RADIATION-DAMAGE IN SIO2 [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 644 - 647

[6] HENZEL R, 1984, J ELECTROCHEM SOC, V131, P1681

[7] PREPARATION OF AMINO GROUP-CONTAINING POLYMERS BY PLASMA POLYMERIZATION [J]. JOURNAL OF POLYMER SCIENCE PART A-POLYMER CHEMISTRY, 1985, 23 (05) : 1445 - 1454

[8] ELECTRICAL-PROPERTIES OF METAL-POLYMER (POLYSILOXANE)-SILICON STRUCTURES AND APPLICATION OF POLYSILOXANE TO PASSIVATION OF SEMICONDUCTOR-DEVICES [J]. THIN SOLID FILMS, 1976, 33 (01) : 35 - 41

[9] PLASMA ASSISTED CHEMICAL VAPOR-DEPOSITED THIN-FILMS FOR MICROELECTRONIC APPLICATIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (05): : 1159 - 1167

[10] THE VARIATION OF PHYSICAL-PROPERTIES OF PLASMA-DEPOSITED SILICON-NITRIDE AND OXYNITRIDE WITH THEIR COMPOSITIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) : 2348 - 2358