SELF-ALIGNED INGAP/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FOR MICROWAVE-POWER APPLICATION

被引：22

作者：

REN, F ^{[1
]}

ABERNATHY, CR ^{[1
]}

PEARTON, SJ ^{[1
]}

LOTHIAN, JR ^{[1
]}

WISK, PW ^{[1
]}

FULLOWAN, TR ^{[1
]}

CHEN, YK ^{[1
]}

YANG, LW ^{[1
]}

FU, ST ^{[1
]}

BROZOVICH, RS ^{[1
]}

LIN, HH ^{[1
]}

机构：

[1] GE CO,ELECTR LAB,SYRACUSE,NY 13221

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 07期

关键词：

DC current gain - Heterojunction bipolar transistors (HBT) - Indium gallium phosphide - Self aligned heterojunction;

D O I：

10.1109/55.225563

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As an alternative to AlGaAs/GaAs heterojunction bipolar transistors (HBT's) for microwave applications, InGaP/GaAs HBT's with carbon-doped base layers grown by metal organic molecular beam epitaxy (MOMBE) are demonstrated with excellent dc, RF, and microwave performance. As previously reported, with a 700-angstrom-thick base layer (135-OMEGA/square sheet resistance), a dc current gain of 25, and cutoff frequency and maximum frequency of oscillation above 70 GHz were measured for a 2 X 5-mum2 emitter area device. A device with 12 cells, each consisting of a 2 x 15-mum2 emitter area device for a total emitter area of 360 mum2, was power tested at 4 GHz under continuous-wave (CW) bias condition. The device delivered 0.6-W output power with 13-dB linear gain and a power-added efficiency of 50%.

引用

页码：332 / 334

页数：3

共 9 条

[1] IMPROVED PERFORMANCE OF CARBON-DOPED GAAS BASE HETEROJUNCTION BIPOLAR-TRANSISTORS THROUGH THE USE OF INGAP [J].