PULSED EXCIMER AND CO2-LASER ANNEALING OF ION-IMPLANTED SILICON

被引：16

作者：

NARAYAN, J

JAMES, RB

HOLLAND, OW

AZIZ, MJ

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT ENGN,RALEIGH,NC 27695

[2] SANDIA NATL LABS,LIVERMORE,CA 94550

[3] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37830

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 04期

关键词：

D O I：

10.1116/1.573387

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1836 / 1838

页数：3

共 10 条

[1] SUBSTRATE HEATING EFFECTS IN CO2-LASER ANNEALING OF ION-IMPLANTED SILICON [J].

BLOMBERG, M ;

NAUKKARINEN, K ;

TUOMI, T ;

AIRAKSINEN, VM ;

LUOMAJARVI, M ;

RAUHALA, E .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2327-2328

[2]

BROWN W, 1984, EC SERVICE B CANADIA, P1

[3]

CELLER GK, 1978, LASER SOLID INTERACT, P381

[4] THEORY OF NON-LINEAR OPTICAL-ABSORPTION ASSOCIATED WITH FREE-CARRIERS IN SEMICONDUCTORS [J].

JAMES, RB ;

SMITH, DL .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (11) :1841-1864

[5] MELTING PHENOMENA AND PULSED-LASER ANNEALING IN SEMICONDUCTORS [J].

NARAYAN, J ;

FLETCHER, J ;

WHITE, CW ;

CHRISTIE, WH .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) :7121-7128

[6]

NARAYAN J, 1984, B AM PHYS SOC, V29, P389

[7] CO2-LASER ANNEALING OF SILICON [J].

NAUKKARINEN, K ;

TUOMI, T ;

BLOMBERG, M ;

LUOMAJARVI, M ;

RAUHALA, E .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5634-5640

[8]

THOMSON MO, 1984, THESIS CORNELL U

[9] LASER ANNEALING OF ION-IMPLANTED SEMICONDUCTORS [J].

WHITE, CW ;

NARAYAN, J ;

YOUNG, RT .

SCIENCE, 1979, 204 (4392) :461-468

[10]

[No title captured]

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