EFFECT OF OXIDATION PROCESSING ON THE ENERGY-DISTRIBUTION AND CHARGING TIME OF RADIATION-INDUCED INTERFACE TRAPS

被引：6

作者：

SCHWALKE, U ^{[1
]}

KERBER, M ^{[1
]}

机构：

[1] SIEMENS AG,CORP RES & DEV,W-8000 MUNICH 83,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 16期

关键词：

D O I：

10.1063/1.105087

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A simple modification of the quasi-static capacitance-voltage technique is used to obtain the charging time of interface traps in addition to their energy distribution so that fast and slow traps can be separated. Measurements on irradiated metal-oxide-semiconductor capacitors containing thin (50-150 angstrom) oxides reveal that a portion of the interface traps in the upper half of the band gap consist of slow trapping centers. Both the energy distribution and the charging time of radiation-induced interface traps are found to depend on the oxide growth process and gate oxide thickness. The data suggest that oxides grown at high temperatures (1200-degrees-C) by rapid thermal oxidation possess a lower concentration of radiation-sensitive strained bonds than furnace oxides grown at 800-degrees-C.

引用

页码：1774 / 1776

页数：3

共 13 条

[1] 2 DISTINCT INTERFACE TRAP PEAKS IN RADIATION-DAMAGED METAL/SIO2/SI STRUCTURES [J].