A STUDY OF THE ELECTRICAL AND LUMINESCENCE CHARACTERISTICS OF A NOVEL SI-BASED THIN-FILM ELECTROLUMINESCENT DEVICE

被引：18

作者：

ROBBINS, DJ ^{[1
]}

DIMARIA, DJ ^{[1
]}

FALCONY, C ^{[1
]}

DONG, DW ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 08期

关键词：

D O I：

10.1063/1.332656

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4553 / 4569

页数：17

相关论文

共 45 条

[31] PROBE LAYER MEASUREMENTS OF ELECTRO-LUMINESCENCE EXCITATION IN AC THIN-FILM DEVICES
MARRELLO, V
SAMUELSON, L
ONTON, A
REUTER, W
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3590 - 3599
[32] DC ELECTROLUMINESCENCE ON M-I-S STRUCTURES IN THIN-FILMS
MATSUMOTO, H
TANAKA, S
YABUMOTO, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (09) : 1543 - 1548
[33] MOLECULAR-BEAM EPITAXIAL ZNSE-MN DC ELECTROLUMINESCENT CELL WITH VERY LOW THRESHOLD VOLTAGE
MISHIMA, T
WANG, QK
TAKAHASHI, K
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5797 - 5799
[34] MORTON DC, 1981, SID DIG, V81, P30
[35] THIN-FILM DC-EL CELL OF AU-ZNSE - MN-N-GAAS HETERO-STRUCTURE WITH THRESHOLD VOLTAGE OF 20 V
OHNISHI, H
HAMAKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (07) : 1225 - 1230
[36] LOW THRESHOLD DC ELECTROLUMINESCENCE IN ZNSE - MN FILMS DEPOSITED ON N-GAAS SINGLE-CRYSTAL
OHNISHI, H
HAMAKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (06) : 981 - 985
[37] WORK FUNCTION OF IN2O3 FILM AS DETERMINED FROM INTERNAL PHOTOEMISSION
PAN, CA
MA, TP
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 714 - 716
[38] REUTER W, COMMUNICATION
[39] ROBBINS D, UNPUB
[40] A NEW LOW-VOLTAGE SI-COMPATIBLE ELECTROLUMINESCENT DEVICE
ROBBINS, DJ
FALCONY, C
DIMARIA, DJ
DONG, DW
DEGELORMO, JF
CHANG, IF
DOVE, DB
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (06): : 148 - 151

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