STRAIN RELAXATION OF CDTE(100) LAYERS GROWN BY HOT-WALL EPITAXY ON GAAS(100) SUBSTRATES

被引:53
作者
TATSUOKA, H
KUWABARA, H
NAKANISHI, Y
FUJIYASU, H
机构
[1] SHIZUOKA UNIV,ELECTR RES INST,HAMAMATSU,SHIZUOKA 432,JAPAN
[2] SHIZUOKA UNIV,FAC ENGN,HAMAMATSU,SHIZUOKA 432,JAPAN
关键词
D O I
10.1063/1.346079
中图分类号
O59 [应用物理学];
学科分类号
摘要
The strain relaxation of CdTe(100) layers grown on GaAs(100) substrates by hot-wall epitaxy was investigated by measurement of optical properties, x-ray analysis, and transmission electron microscopy. It is considered from transmission electron microscopy observation that relaxation of most of the strain due to lattice mismatch occurred at the interface. However, a small amount of strain, of the order of 10-3, remained in layers thicker than 0.7 μm, and it was relaxed as the layer thickness increased. The residual strain of 4×10-4, which exists in layers thicker than 10 μm, was due to the difference between the thermal expansion coefficients of the layer and the substrate. Moreover, for layers thicker than 17 μm, split ground (n=1) and first excited (n=2) free-exciton states due to internal strain have for the first time been observed by photoluminescence and reflectance spectroscopy. The results show that CdTe layers with excellent crystallinity and homogeneity in strain are obtained.
引用
收藏
页码:6860 / 6864
页数:5
相关论文
共 12 条
[1]   ENERGY LEVELS OF DIRECT EXCITONS IN SEMICONDUCTORS WITH DEGENERATE BANDS [J].
BALDERESCHI, A ;
LIPARI, NO .
PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02) :439-+
[2]   GROWTH OF (111) CDTE ON TILTED (001) GAAS [J].
CIBERT, J ;
GOBIL, Y ;
SAMINADAYAR, K ;
TATARENKO, S ;
CHAMI, A ;
FEUILLET, G ;
DANG, LS ;
LIGEON, E .
APPLIED PHYSICS LETTERS, 1989, 54 (09) :828-830
[3]   HYDROSTATIC AND UNIAXIAL PRESSURE COEFFICIENTS OF CDTE [J].
DUNSTAN, DJ ;
GIL, B ;
HOMEWOOD, KP .
PHYSICAL REVIEW B, 1988, 38 (11) :7862-7865
[4]   AUTOIONIZATION BROADENING OF LIGHT-HOLE EXCITON IN GAAS UNDER UNIAXIAL-STRESS [J].
LEE, J ;
VASSELL, MO ;
HSU, KT ;
JAN, GJ ;
LIU, CP ;
CHANG, IF .
SOLID STATE COMMUNICATIONS, 1989, 72 (01) :63-65
[5]   ELASTIC STRAINS IN CDTE-GAAS HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
OLEGO, DJ ;
PETRUZZELLO, J ;
GHANDHI, SK ;
TASKAR, NR ;
BHAT, IB .
APPLIED PHYSICS LETTERS, 1987, 51 (02) :127-129
[6]   HIGH-RESOLUTION ELECTRON-MICROSCOPE STUDY OF EPITAXIAL CDTE-GAAS INTERFACES [J].
OTSUKA, N ;
KOLODZIEJSKI, LA ;
GUNSHOR, RL ;
DATTA, S ;
BICKNELL, RN ;
SCHETZINA, JF .
APPLIED PHYSICS LETTERS, 1985, 46 (09) :860-862
[7]  
Sergeeva L. A., 1980, IZVESTIYA AKADEMII N, V16, P1346
[8]   GROWTH AND CHARACTERIZATION OF HIGH-QUALITY CDTE EPILAYERS ON GAAS SUBSTRATES BY HOT-WALL EPITAXY [J].
SITTER, H ;
LISCHKA, K ;
FASCHINGER, W ;
WOLFRUM, J ;
PASCHER, H ;
PAUTRAT, JL .
JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :377-381
[9]   GROWTH OF CDTE ON GAAS BY HOT-WALL EPITAXY AND ITS STRESS-RELAXATION [J].
TATSUOKA, H ;
KUWABARA, H ;
FUJIYASU, H ;
NAKANISHI, Y .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (05) :2073-2075
[10]   EXCITONS AND BAND SPLITTING PRODUCED BY UNIAXIAL STRESS IN CDTE [J].
THOMAS, DG .
JOURNAL OF APPLIED PHYSICS, 1961, 32 :2298-&