GROWTH AND CHARACTERIZATION OF HIGH-QUALITY CDTE EPILAYERS ON GAAS SUBSTRATES BY HOT-WALL EPITAXY

被引：34

作者：

SITTER, H

LISCHKA, K

FASCHINGER, W

WOLFRUM, J

PASCHER, H

PAUTRAT, JL

机构：

[1] UNIV BAYREUTH,INST PHYS,D-8580 BAYREUTH,FED REP GER

[2] CEN,DEPT RECH FONDAMENTALE,F-38041 GRENOBLE,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 86卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90746-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：377 / 381

页数：5

共 12 条

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[9] HIGH-QUALITY CDTE EPILAYERS ON GAAS GROWN BY HOT-WALL EPITAXY [J].

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