NUCLEATION OF AN INTERMETALLIC AT THIN-FILM INTERFACES - VSI2 CONTRASTED WITH AL3NI

被引：19

作者：

MA, E

CLEVENGER, LA

THOMPSON, CV

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

[2] MIT, DEPT MAT SCI & ENGN, CAMBRIDGE, MA 02139 USA

来源：

JOURNAL OF MATERIALS RESEARCH | 1992年 / 7卷 / 06期

关键词：

D O I：

10.1557/JMR.1992.1350

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We analyze the formation of VSi2 at the amorphous-vanadium-silicide/amorphous-Si interface by linear-heating and isothermal calorimetry, and cross-sectional transmission electron microscopy. We show evidence that indicates sporadic VSi2 nucleation with a steady-state nucleation rate after a transient period. The results are contrasted with those obtained for Al3Ni nucleating at the polycrystalline-Al/polycrystalline-Ni interface, where the kinetics appears to be controlled by growth of a fixed number of nuclei at quickly consumed preferred nucleation sites.

引用

页码：1350 / 1355

页数：6

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