PHOTOEMISSION-STUDY OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED AND REACTIVELY SPUTTERED TITANIUM NITRIDE IN W/TIN/SI

被引：21

作者：

KUMAR, S ^{[1
]}

CHOPRA, DR ^{[1
]}

SMITH, GC ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,DALLAS,TX 75265

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 03期

关键词：

D O I：

10.1116/1.585891

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-pressure chemical vapor deposited (LPCVD) tungsten has been deposited onto LPCVD grown and reactively sputtered titanium nitride (TiN) films. The x-ray photoelectron spectroscopy depth profiles and the chemical analysis suggest that the chemical interaction of TiN with W and with the Si/SiO2 substrates tends to be minimal.

引用

页码：1218 / 1220

页数：3

共 9 条

[1] TUNGSTEN TITANIUM NITRIDE LOW-RESISTANCE INTERCONNECTIONS DURABLE FOR HIGH-TEMPERATURE PROCESSING [J].