TRANSIENT ANNEALING OF MODULATION-DOPED GAAS/ALXGA1-XAS HETEROSTRUCTURES

[1] DIFFUSION OF SILICON IN GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1965, 8 (12) : 943 - &

[2] CROWDER BL, 1971, J VAC SCI TECHNOL, V8, pS71

[3] TRANSPORT-PROPERTIES IN GAAS-ALXGA1-XAS HETEROSTRUCTURES AND MESFET APPLICATION [J]. ELECTRONICS LETTERS, 1981, 17 (10) : 342 - 344

[4] DiLorenzo J. V., 1982, International Electron Devices Meeting. Technical Digest, P578

[5] MOLECULAR-BEAM EPITAXY GROWTH OF (AL,GA) AS GAAS HETEROSTRUCTURES [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 449 - 454

[6] INTERACTION KINETICS OF AS2 AND GA ON [100] GAAS SURFACES [J]. SURFACE SCIENCE, 1977, 64 (01) : 293 - 304

[7] THE EFFECT OF ANNEALING ON THE ELECTRICAL-PROPERTIES OF SELECTIVELY DOPED GAAS/N-ALGAAS HETEROJUNCTION STRUCTURES GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L814 - L816

[8] INFRARED RAPID THERMAL ANNEALING FOR GAAS DEVICE FABRICATION [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 4998 - 5003

[9] KUNZEL H, 1981, I PHYS SER C, V56, P419

[10] ULTRA HIGH-SPEED INTEGRATED-CIRCUITS USING GAAS/GAALAS HIGH ELECTRON-MOBILITY TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1569 - 1569

[1] DIFFUSION OF SILICON IN GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1965, 8 (12) : 943 - &

[2] CROWDER BL, 1971, J VAC SCI TECHNOL, V8, pS71

[3] TRANSPORT-PROPERTIES IN GAAS-ALXGA1-XAS HETEROSTRUCTURES AND MESFET APPLICATION [J]. ELECTRONICS LETTERS, 1981, 17 (10) : 342 - 344

[4] DiLorenzo J. V., 1982, International Electron Devices Meeting. Technical Digest, P578

[5] MOLECULAR-BEAM EPITAXY GROWTH OF (AL,GA) AS GAAS HETEROSTRUCTURES [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 449 - 454

[6] INTERACTION KINETICS OF AS2 AND GA ON [100] GAAS SURFACES [J]. SURFACE SCIENCE, 1977, 64 (01) : 293 - 304

[7] THE EFFECT OF ANNEALING ON THE ELECTRICAL-PROPERTIES OF SELECTIVELY DOPED GAAS/N-ALGAAS HETEROJUNCTION STRUCTURES GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L814 - L816

[8] INFRARED RAPID THERMAL ANNEALING FOR GAAS DEVICE FABRICATION [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 4998 - 5003

[9] KUNZEL H, 1981, I PHYS SER C, V56, P419

[10] ULTRA HIGH-SPEED INTEGRATED-CIRCUITS USING GAAS/GAALAS HIGH ELECTRON-MOBILITY TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1569 - 1569