SULFUR PAIR IN SILICON - S-33 ELECTRON-NUCLEAR DOUBLE-RESONANCE

被引：9

作者：

VANOOSTEN, AB

AMMERLAAN, CAJ

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.38.13291

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：13291 / 13296

页数：6

共 29 条

[1] THEORY OF THE NUCLEAR HYPERFINE STRUCTURE OF PARAMAGNETIC RESONANCE SPECTRA IN CRYSTALS [J].

ABRAGAM, A ;

PRYCE, MHL .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 205 (1080) :135-153

[2]

[Anonymous], 1986, MAT SCI FORUM

[3] IDENTIFICATION OF CHALCOGEN POINT-DEFECT SITES IN SILICON BY TOTAL-ENERGY CALCULATIONS [J].

BEELER, F ;

SCHEFFLER, M ;

JEPSEN, O ;

GUNNARSSON, O .

PHYSICAL REVIEW LETTERS, 1985, 54 (23) :2525-2528

[4] ELECTRONIC-STRUCTURE CALCULATION OF POINT-DEFECTS IN SILICON [J].

BEELER, F ;

ANDERSEN, OK ;

GUNNARSSON, O ;

JEPSEN, O ;

SCHEFFLER, M .

COMPUTER PHYSICS COMMUNICATIONS, 1987, 44 (03) :297-305

[5] INFLUENCE OF HYDROSTATIC PRESSURE AND TEMPERATURE ON DEEP DONOR LEVELS OF SULFUR IN SILICON [J].

CAMPHAUSEN, DL ;

JAMES, HM ;

SLADEK, RJ .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (06) :1899-+

[6] SULFUR IN SILICON [J].

CARLSON, RO ;

HALL, RN ;

PELL, EM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :81-83

[7]

Fuller G. H., 1976, Journal of Physical and Chemical Reference Data, V5, P835, DOI 10.1063/1.555544

[8]

HOLM C, 1981, THESIS LUDWIG MAXIMI

[9] HIGH-RESOLUTION STUDIES OF SULFUR-RELATED AND SELENIUM-RELATED DONOR CENTERS IN SILICON [J].

JANZEN, E ;

STEDMAN, R ;

GROSSMANN, G ;

GRIMMEISS, HG .

PHYSICAL REVIEW B, 1984, 29 (04) :1907-1918

[10] ELECTRONIC-STRUCTURE OF DEEP-LYING SULFUR CENTERS IN SI [J].

KRAG, WE ;

KLEINER, WH ;

ZEIGER, HJ .

PHYSICAL REVIEW B, 1986, 33 (12) :8304-8320

← 1 2 3 →