ELECTRONIC-STRUCTURE OF DEEP-LYING SULFUR CENTERS IN SI

被引：12

作者：

KRAG, WE

KLEINER, WH

ZEIGER, HJ

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.33.8304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8304 / 8320

页数：17

共 23 条

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[2]

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