UNIFORMITY OF QUANTUM WELL HETEROSTRUCTURE GAALAS LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：9

作者：

SCIFRES, DR

BURNHAM, RD

BERNSTEIN, M

CHUNG, H

ENDICOTT, F

MOSBY, W

TRAMONTANA, J

WALKER, J

YINGLING, RD

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 06期

关键词：

D O I：

10.1063/1.93586

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：501 / 504

页数：4

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[1] CURRENT THRESHOLD UNIFORMITY OF SHALLOW PROTON STRIPE GAALAS DOUBLE HETEROSTRUCTURE LASERS GROWN BY METALORGANIC-CHEMICAL VAPOR-DEPOSITION
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[J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 118 - 119
[2] GROWTH OF EXTREMELY UNIFORM LAYERS BY ROTATING SUBSTRATE HOLDER WITH MOLECULAR-BEAM EPITAXY FOR APPLICATIONS TO ELECTRO-OPTIC AND MICROWAVE DEVICES
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[J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 360 - 362
[3] Dingle R, 1975, FESTKORPERPROBLEME, V15, P21
[4] PREPARATION AND PROPERTIES OF GA1-XALXAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION
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[5] ABRUPT GA1-XALXAS-GAAS QUANTUM-WELL HETEROSTRUCTURES GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
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[J]. APPLIED PHYSICS LETTERS, 1979, 34 (05) : 335 - 337
[6] HOLLONYAK N, IEEE J QUANTUM ELECT, V16, P170
[7] HIGH-POWER COUPLED MULTIPLE STRIPE QUANTUM WELL INJECTION-LASERS
SCIFRES, DR
BURNHAM, RD
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[J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 118 - 120
[8] THOMPSON GHB, 1980, PHYSICS SEMICONDUCTO
[9] HIGH-THROUGH-PUT, HIGH-YIELD, AND HIGHLY-REPRODUCIBLE (ALGA)AS DOUBLE-HETEROSTRUCTURE LASER WAFERS GROWN BY MOLECULAR-BEAM EPITAXY
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (08) : 587 - 589
[10] EXTREMELY LOW THRESHOLD (ALGA) AS MODIFIED MULTIQUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 786 - 788