THEORETICAL-MODEL FOR SELF-INTERSTITIAL GENERATION AT THE SI/SIO2 INTERFACE DURING THERMAL-OXIDATION OF SILICON

被引：65

作者：

TANIGUCHI, K

SHIBATA, Y

HAMAGUCHI, C

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 07期

关键词：

D O I：

10.1063/1.342759

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2723 / 2727

页数：5

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