CHEMICAL VAPOR-DEPOSITION OF SILICON UNDER REDUCED PRESSURE IN HOT-WALL REACTORS

被引：60

作者：

WILKE, TE

TURNER, KA

TAKOUDIS, CG

机构：

[1] Purdue Univ, West Lafayette, IN, USA, Purdue Univ, West Lafayette, IN, USA

来源：

关键词：

CHEMICAL VAPOR DEPOSITION - HOT WALL DEPOSITION REACTORS - LOW PRESSURE TUBULAR REACTOR - POLYSILICON - SILANE DECOMPOSITION;

D O I：

10.1016/0009-2509(86)87141-X

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

(Edited Abstract)

引用

页码：643 / 650

页数：8

共 16 条

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NEWMAN, J .

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JENSEN, KF .

[14]

ROSLER RS, 1977, SOLID STATE TECHNOL, V20, P63

[15] LOW-PRESSURE DEPOSITION OF POLYCRYSTALLINE SILICON FROM SILANE [J].

VANDENBREKEL, CHJ ;

BOLLEN, LJM .

[16]

WILKE TE, 1986, UNPUB J CRYSTAL GROW