SEGREGATION OF AS ON GAAS(100) SURFACE DURING ABRASION PROCESS STUDIED BY X-RAY PHOTOELECTRON-SPECTROSCOPY AND AUGER-ELECTRON SPECTROSCOPY

被引：8

作者：

IIJIMA, Y

MURAMOTO, K

UEMURA, M

HIRAOKA, K

机构：

[1] TOYOHASHI UNIV TECHNOL,CTR TECHNOL DEV,TOYOHASHI,AICHI 440,JAPAN

[2] YAMANASHI UNIV,FAC ENGN,KOFU,YAMANASHI 400,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 11A期

关键词：

GAAS(100); SEGREGATION OF AS; ABRASION PROCESS; X-RAY PHOTOELECTRON SPECTROSCOPY; AUGER ELECTRON SPECTROSCOPY;

D O I：

10.1143/JJAP.32.5080

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

When a GaAs(100) surface was mechanically scribed by a diamond tip in an ultrahigh vacuum (UHV), surface segregation of As was observed using X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The same phenomenon was also seen when the surface was abraded in air using emery paper. In the latter case, angle-resolved XPS analysis of As3d and Ga3d spectra showed the formation of As-As bonds on the abraded surface. Ga-Ga bonds existed beneath the layer of As-As bonds isolated from Ga-As bonds. The mechanism of the surface segregation of As is discussed.

引用

收藏

页码：5080 / 5084

页数：5

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